ELECTRICAL-PROPERTIES OF GLOW-DISCHARGE A-SI-H THIN-FILMS PREPARED WITH A RF PLASMA ETCH UNIT

被引：1

作者：

AHMED, S ^{[1
]}

SIGURD, D ^{[1
]}

机构：

[1] INST MICROWAVE TECHNOL,S-10044 STOCKHOLM 70,SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 69卷 / 01期

关键词：

D O I：

10.1002/pssa.2210690130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：305 / 314

页数：10

共 16 条

[1] THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
AST, DG
BRODSKY, MH
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03): : 273 - 285
[2] BAYER W, 1979, J ELECTRONIC MATER, V8, P127
[3] Carlson D. E., 1979, Amorphous semiconductors, P287
[4] Chu WK., 1978, BACKSCATTERING SPECT
[5] SUBSTITUTIONAL DOPING IN AMORPHOUS-SEMICONDUCTORS AS-SI SYSTEM
KNIGHTS, JC
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 663 - 667
[6] ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF ION-IMPLANTED AMORPHOUS-SILICON
LECOMBER, PG
SPEAR, WE
MULLER, G
KALBITZER, S
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 327 - 332
[7] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS
LECOMBER, PG
SPEAR, WE
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
[8] ELECTRICAL AND COMPOSITIONAL HETEROGENEITY OF AMORPHOUS SI-H FILMS
MAILHIOT, C
CURRIE, JF
SAPIEHA, S
WERTHEIMER, MR
YELON, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 207 - 212
[9] Mott N. F., 1979, ELECT PROCESSES NONC, P221
[10] EFFECT OF DC ELECTRIC-FIELD ON THE BASIC PROPERTIES OF RF PLASMA DEPOSITED A-SI
OKAMOTO, H
YAMAGUCHI, T
NITTA, Y
HAMAKAWA, Y
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 201 - 206