HIGH-FIELD TRANSPORT OF HOLES IN SILICON

被引：14
|
作者：
SMITH, PM [1 ]
FREY, J [1 ]
CHATTERJEE, P [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期
关键词：
D O I：
10.1063/1.92711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：332 / 333
页数：2
相关论文
共 50 条
  • [31] HIGH-FIELD TRANSPORT IN INDIUM PHOSPHIDE
    FAWCETT, W
    HERBERT, DC
    ELECTRONICS LETTERS, 1973, 9 (14) : 308 - 309
  • [32] High-field transport in model materials
    Bringuier, E
    PHYSICAL REVIEW B, 1996, 54 (03): : 1799 - 1807
  • [33] High-field electron transport in GaInP
    Sakamoto, R
    Nakata, K
    Nakajima, S
    PHYSICA B, 1999, 272 (1-4): : 250 - 252
  • [34] HOT PHONONS IN HIGH-FIELD TRANSPORT
    RIDLEY, BK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1142 - 1150
  • [35] HIGH-FIELD TRANSPORT IN GAAS TRANSISTORS
    BERTHOLD, K
    LEVI, AFJ
    WALKER, J
    MALIK, RJ
    APPLIED PHYSICS LETTERS, 1989, 54 (09) : 813 - 815
  • [36] HIGH-FIELD TRANSPORT OF EXCESS ELECTRONS AND HOLES IN AMORPHOUS SIO2 (EXTENDED ABSTRACT)
    HUGHES, RC
    CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 2217 - 2219
  • [37] Spin Transport in High-Field Superconductors
    Beckmann, Detlef
    ANNALEN DER PHYSIK, 2024, 536 (07)
  • [38] HIGH-FIELD TRANSPORT IN DISORDERED MATERIALS
    MOVAGHAR, B
    YELON, A
    MEUNIER, M
    CHEMICAL PHYSICS, 1990, 146 (03) : 389 - 408
  • [39] HIGH-FIELD TRANSPORT IN A-SIH
    NEBEL, CE
    STREET, RA
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1993, 7 (05): : 1207 - 1258
  • [40] High-field transport properties of graphene
    Dong, H. M.
    Xu, W.
    Peeters, F. M.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
12345