HIGH-FIELD TRANSPORT OF HOLES IN SILICON

被引：14
|
作者：
SMITH, PM [1 ]
FREY, J [1 ]
CHATTERJEE, P [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期
关键词：
D O I：
10.1063/1.92711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：332 / 333
页数：2
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