HIGH-FIELD TRANSPORT OF HOLES IN SILICON

被引：14

作者：

SMITH, PM ^{[1
]}

FREY, J ^{[1
]}

CHATTERJEE, P ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：332 / 333

页数：2

共 9 条

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OTTAVIANI, G ;

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[3] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[4] DIFFUSIVITY OF HOLES IN SILICON [J].

NAVA, F ;

CANALI, C ;

REGGIANI, L ;

GASQUET, D ;

VAISSIERE, JC ;

NOUGIER, JP .

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[5] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J].

PRIOR, AC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) :175-180

[6] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ .

PHYSICAL REVIEW, 1953, 90 (05) :766-769

[7] DEPENDENCE OF HOLE VELOCITY UPON ELECTRIC FIELD AND HOLE DENSITY FOR P-TYPE SILICON [J].

SEIDEL, TE ;

SCHARFET.DL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) :2563-+

[8] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J].

SIGMON, TW ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :320-&

[9] ELECTRON VELOCITY IN SI AND GAAS AT VERY HIGH ELECTRIC-FIELDS [J].

SMITH, PM ;

INOUE, M ;

FREY, J .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :797-798

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