HEAVY-ION RANGES IN ALUMINUM AND SILICON

[1] RANGES OF IONS WITH Z1 GREATER-THAN 54 IN AL AND AL2O3 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 678 - 679

[2] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[3] RANGES IN SILICON OF IONS WITH ATOMIC NUMBERS 62 LESS-THAN-OR-EQUAL-TO Z-1 LESS-THAN-OR-EQUAL-TO 66 AT 100 KEV [J]. PHYSICS LETTERS A, 1976, 56 (05) : 371 - 373

[4] BARRAGAN A, 1975, COMMUNICATION

[5] BLANCHARD B, 1975, ANALUSIS, V3, P312

[6] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[7] INVESTIGATION OF ION-IMPLANTED CRYSTALS BY MEANS OF DIRECTIONAL EFFECTS IN CHARGED PARTICLE REACTION YIELDS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 311 (1504): : 35 - &

[8] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[9] A RADIOCHEMICAL TECHNIQUE FOR STUDYING RANGE-ENERGY RELATIONSHIPS FOR HEAVY IONS OF KEV ENERGIES IN ALUMINUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09): : 1526 - 1534

[10] THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09): : 1535 - 1546

[1] RANGES OF IONS WITH Z1 GREATER-THAN 54 IN AL AND AL2O3 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 678 - 679

[2] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[3] RANGES IN SILICON OF IONS WITH ATOMIC NUMBERS 62 LESS-THAN-OR-EQUAL-TO Z-1 LESS-THAN-OR-EQUAL-TO 66 AT 100 KEV [J]. PHYSICS LETTERS A, 1976, 56 (05) : 371 - 373

[4] BARRAGAN A, 1975, COMMUNICATION

[5] BLANCHARD B, 1975, ANALUSIS, V3, P312

[6] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[7] INVESTIGATION OF ION-IMPLANTED CRYSTALS BY MEANS OF DIRECTIONAL EFFECTS IN CHARGED PARTICLE REACTION YIELDS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 311 (1504): : 35 - &

[8] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[9] A RADIOCHEMICAL TECHNIQUE FOR STUDYING RANGE-ENERGY RELATIONSHIPS FOR HEAVY IONS OF KEV ENERGIES IN ALUMINUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09): : 1526 - 1534

[10] THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09): : 1535 - 1546