CARBONIZATION OF SI SURFACES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

被引：6

作者：

ZEKENTES, K

CALLEC, R

TSAGARAKI, K

SAGNES, B

ARNAUD, G

PASCUAL, J

CAMASSEL, J

机构：

[1] UNIV AUTONOMA BARCELONA,DEPT FIS,E-08193 BARCELONA,SPAIN

[2] UNIV MONTPELLIER 2,CNRS,GES,F-34095 MONTPELLIER,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

SILICON CARBIDE; AUGER ELECTRON SPECTROSCOPY; MOLECULAR BEAM EPITAXY; IR SPECTROSCOPY;

D O I：

10.1016/0921-5107(94)04022-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carbonization of Si(100) surfaces exposed to a sublimed carbon beam at low substrate temperatures in a molecular beam epitaxy system was studied. Different carbon sublimation rates and substrate temperatures were used. The films were analyzed using in situ (reflected high energy electron diffraction and Auger surface analysis) and ex-situ (scanning electron microscopy and Fourier transform IR spectroscopy) methods. The results of the analysis showed that single-crystalline beta-SiC can be grown by this technique. In addition, the Si-to-SiC conversion temperature limit was determined to be 600-650 degrees C which is the lowest reported value, regardless of the growth method.

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收藏

页码：138 / 141

页数：4

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