INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON-MOBILITY IN HEAVILY DOPED SILICON

被引：26
作者：
FINETTI, M [1 ]
GALLONI, R [1 ]
MAZZONE, AM [1 ]
机构：
[1] CNR,LAMEL LAB,VIA CASTAGNOLI 1,I-40126 BOLOGNA,ITALY
来源：
JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 03期
关键词：
D O I：
10.1063/1.326119
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Mobility measurements have been carried out at room temperature on phosphorus-doped silicon samples. The desired concentration of dopant, varying in the range 1019-1020 atoms/cm3, was obtained in three different ways: Homogeneously during growth of the crystal, by ion implantation, and by thermal diffusion. Significant differences have been observed. A theoretical analysis, based on scattering due to dopant impurities, dislocations, and point defects, has been found to be in reasonable agreement with the results obtained from mobility measurements and from transmission electron microscopy and x-ray analysis performed on the samples.
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页码：1381 / 1385
页数：5
相关论文
共 15 条
[1]   GROWTH OF STACKING-FAULTS AND DISLOCATIONS INDUCED IN SILICON BY PHOSPHORUS PREDEPOSITION [J].
ARMIGLIATO, A ;
SERVIDORI, M ;
SOLMI, S ;
VECCHI, I .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1806-1812
[2]   ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J].
BACCARANI, G ;
OSTOJA, P .
SOLID-STATE ELECTRONICS, 1975, 18 (06) :579-580
[3]  
BONCHBRUEVICH VL, 1966, ELECTRON THEORY HEAV
[4]   RADIATION-DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION - RANDOM AND ALIGNED IMPLANTS [J].
CEMBALI, F ;
DORI, L ;
GALLONI, R ;
SERVIDORI, M ;
ZIGNANI, F .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :111-117
[5]   IMPURITY EFFECTS ON CONDUCTION IN HEAVILY DOPED N-TYPE SILICON [J].
FINETTI, M ;
MAZZONE, AM .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4597-4600
[6]  
FISHER H, 1976, SOLID STATE ELECTRON, V20, P167
[7]  
Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1
[8]  
Friedel J., 1964, DISLOCATIONS
[9]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[10]  
LINDHOLM FA, 1975, IEEE PHOTOVOLTAIC SP
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