INTERACTION OF CESIUM WITH CLEAVED GAAS(110) AND GE(111) SURFACES - WORK FUNCTION MEASUREMENTS AND ADSORPTION SITE MODEL

被引：56

作者：

CLEMENS, HJ ^{[1
]}

WIENSKOWSKI, JV ^{[1
]}

MONCH, W ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

SURFACE SCIENCE | 1978年 / 78卷 / 03期

关键词：

D O I：

10.1016/0039-6028(78)90238-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：648 / 666

页数：19

共 27 条

[11] THE DIPOLE MOMENT OF HYDROGEN FLUORIDE AND THE IONIC CHARACTER OF BONDS [J].

HANNAY, NB ;

SMYTH, CP .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1946, 68 (02) :171-173

[12] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J].

HENZLER, M .

SURFACE SCIENCE, 1973, 36 (01) :109-122

[13]

LANGMUIR I, 1933, PHYS REV, V44, P423

[14] THEORY OF SEMICONDUCTOR SURFACE-STATES AND METAL-SEMICONDUCTOR INTERFACES [J].

LOUIE, SG ;

CHELIKOWSKY, JR ;

COHEN, ML .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :790-797

[15] ELECTRON-STIMULATED DESORPTION AND WORK FUNCTION STUDIES OF CLEAN AND CESIATED (110) GAAS [J].

MADEY, TE ;

YATES, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :39-&

[16] SURFACE STATES ON CLEAN AND ON CESIUM-COVERED CLEAVED SILICON SURFACES [J].

MONCH, W .

PHYSICA STATUS SOLIDI, 1970, 40 (01) :257-&

[17] CORRELATION OF GEOMETRICAL STRUCTURE AND ELECTRONIC PROPERTIES AT CLEAN SEMICONDUCTOR SURFACES [J].

MONCH, W .

SURFACE SCIENCE, 1977, 63 (01) :79-95

[18]

Pauling L., 1960, NATURE CHEM BOND

[19] FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES [J].

SCHEER, JJ ;

VANLAAR, J .

SOLID STATE COMMUNICATIONS, 1967, 5 (04) :303-&

[20] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS FOR SI (111) SURFACES - UNRECONSTRUCTED (1X1) AND RECONSTRUCTED (2X1) MODEL STRUCTURES [J].

SCHLUTER, M ;

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1975, 12 (10) :4200-4214

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