INTERACTION OF CESIUM WITH CLEAVED GAAS(110) AND GE(111) SURFACES - WORK FUNCTION MEASUREMENTS AND ADSORPTION SITE MODEL

被引:56
作者
CLEMENS, HJ [1 ]
WIENSKOWSKI, JV [1 ]
MONCH, W [1 ]
机构
[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER
关键词
D O I
10.1016/0039-6028(78)90238-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:648 / 666
页数:19
相关论文
共 27 条
[1]  
ALLAN F, 1966, PHYS REV, V144, P558
[2]   ELECTRONEGATIVITY VALUES FROM THERMOCHEMICAL DATA [J].
ALLRED, AL .
JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1961, 17 (3-4) :215-221
[3]  
Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397
[4]  
AUER PP, UNPUBLISHED
[5]  
Clemens H. J., 1975, Critical Reviews in Solid State Sciences, V5, P273, DOI 10.1080/10408437508243484
[6]  
CLEMENS HJ, 1977, 7TH P INT VAC C 3RD, P635
[7]   ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].
DINAN, JH ;
GALBRAIT.LK ;
FISCHER, TE .
SURFACE SCIENCE, 1971, 26 (02) :587-&
[8]   STRAIN-INDUCED INHOMOGENEITY OF SURFACE POTENTIAL ON FRESHLY CLEAVED SEMICONDUCTOR SURFACES [J].
FISCHER, TE ;
VILJOEN, PE .
PHYSICAL REVIEW LETTERS, 1971, 26 (24) :1475-&
[9]   DETERMINATION OF ADSORPTION SITE BY LOW-ENERGY ELECTRON-DIFFRACTION FOR IODINE ON SILVER (111) [J].
FORSTMANN, F ;
BERNDT, W ;
BUTTNER, P .
PHYSICAL REVIEW LETTERS, 1973, 30 (01) :17-19
[10]   SURFACE STATE BAND ON GAAS (110) FACE [J].
GREGORY, PE ;
SPICER, WE ;
CIRACI, S ;
HARRISON, WA .
APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514