INSITU MEASUREMENT OF THE METALORGANIC AND HYDRIDE PARTIAL PRESSURES IN A MOCVD REACTOR USING ULTRAVIOLET-ABSORPTION SPECTROSCOPY

被引：39

作者：

HEBNER, GA

KILLEEN, KP

BIEFELD, RM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90144-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：293 / 301

页数：9

共 16 条

[1] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J].

BEDAIR, SM ;

TISCHLER, MA ;

KATSUYAMA, T ;

ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :51-53

[2] THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BIEFELD, RM .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :255-263

[3] INSITU, REAL-TIME DIAGNOSTICS OF OMVPE USING IR-DIODE LASER SPECTROSCOPY [J].

BUTLER, JE ;

BOTTKA, N ;

SILLMON, RS ;

GASKILL, DK .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :163-171

[4] GROWTH OF INSB AND INAS1-XSBX BY OM-CVD [J].

CHIANG, PK ;

BEDAIR, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2422-2426

[5]

DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[6] COMPLEX FLOW PHENOMENA IN VERTICAL MOCVD REACTORS - EFFECTS ON DEPOSITION UNIFORMITY AND INTERFACE ABRUPTNESS [J].

FOTIADIS, DI ;

KREMER, AM ;

MCKENNA, DR ;

JENSEN, KF .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :154-164

[7] THERMAL-DECOMPOSITION OF METALORGANIC COMPOUNDS USED IN THE MOCVD OF INP [J].

KARLICEK, R ;

LONG, JA ;

DONNELLY, VM .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :123-127

[8] UV ABSORPTION-SPECTROSCOPY FOR MONITORING HYDRIDE VAPOR-PHASE EPITAXY OF INGAASP ALLOYS [J].

KARLICEK, RF ;

HAMMARLUND, B ;

GINOCCHIO, J .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :794-799

[9] PHOTODEPOSITION RATES OF METAL FROM METAL ALKYLS [J].

KRCHNAVEK, RR ;

GILGEN, HH ;

CHEN, JC ;

SHAW, PS ;

LICATA, TJ ;

OSGOOD, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :20-26

[10]

Luckerath R., 1987, Chemtronics, V2, P199

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