FIELD PENETRATION AND BAND BENDING NEAR SEMICONDUCTOR SURFACES IN HIGH ELECTRIC-FIELD - COMMENT

被引：0

作者：

TOMITA, M ^{[1
]}

KURODA, T ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JOURNAL DE PHYSIQUE | 1989年 / 50卷 / C8期

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引用

页码：C837 / C840

页数：4

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