FIELD PENETRATION AND BAND BENDING NEAR SEMICONDUCTOR SURFACES IN HIGH ELECTRIC-FIELD - COMMENT

被引:0
作者
TOMITA, M [1 ]
KURODA, T [1 ]
机构
[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN
来源
JOURNAL DE PHYSIQUE | 1989年 / 50卷 / C8期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:C837 / C840
页数:4
相关论文
共 8 条
[1]  
Goldstein Y., 1965, SEMICONDUCTOR SURFAC, P138
[2]   NUMERICAL COMPUTATION OF POTENTIAL PROFILES AND ENERGY-SPECTRUM IN THE SPACE-CHARGE REGION OF SEMICONDUCTORS AT HIGH ELECTRIC-FIELD [J].
MILESHKINA, NV ;
SEMYKINA, EA .
SURFACE SCIENCE, 1988, 200 (2-3) :179-186
[3]  
NERNST L, 1979, SURF SCI, V85, P302
[4]   FIELD-ION MICROSCOPY OF GAAS AND GAP [J].
OHNO, Y ;
NAKAMURA, S ;
ADACHI, T ;
KURODA, T .
SURFACE SCIENCE, 1977, 69 (02) :521-532
[5]   FORMATION OF CLUSTER IONS OF PHOSPHORUS ATOMS IN PULSED-LASER STIMULATED FIELD EVAPORATION OF GALLIUM-PHOSPHIDE [J].
TOMITA, M ;
KURODA, T .
SURFACE SCIENCE, 1988, 201 (1-2) :385-391
[6]  
TOMITA M, IN PRESS SURFACE SCI
[7]   FIELD PENETRATION AND BAND BENDING NEAR SEMICONDUCTOR SURFACES IN HIGH ELECTRIC-FIELDS [J].
TSONG, TT .
SURFACE SCIENCE, 1979, 81 (01) :28-42
[8]  
Wolf H., 1971, SEMICONDUCTORS