LINEARLY RAMPED TEMPERATURE TRANSIENT RAPID THERMAL-OXIDATION OF SILICON

被引：1

作者：

MOSLEHI, MM

KERMANI, A

SARASWAT, KC

机构：

[1] PEAK SYST,FREMONT,CA 94538

[2] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1104 / 1106

页数：3

共 7 条

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[2]

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[3] INTERFACIAL AND BREAKDOWN CHARACTERISTICS OF MOS DEVICES WITH RAPIDLY GROWN ULTRATHIN SIO2 GATE INSULATORS [J].

MOSLEHI, MM ;

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MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) :1407-1410

[4] THIN SIO2 INSULATORS GROWN BY RAPID THERMAL-OXIDATION OF SILICON [J].

MOSLEHI, MM ;

SHATAS, SC ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1353-1355

[5]

MOSLEHI MM, 1987, MATER RES SOC S P, V92, P73

[6] RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J].

NULMAN, J ;

KRUSIUS, JP ;

GAT, A .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :205-207

[7] OXIDATION OF SILICON USING LAMP LIGHT RADIATION [J].

SATO, Y ;

KIUCHI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) :652-654

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