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- [1] CHARACTERISTICS OF THERMOELECTRIC EFFECTS IN PB1-XSNXTE (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.23) SOLID-SOLUTIONS AT LOW-TEMPERATURESSOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (03): : 290 - 293LASHKAREV, GVRADCHENKO, MVORLETSKII, VBSLYNKO, EISTARIK, PI
- [2] DEPENDENCES OF THE LONGITUDINAL AND TRANSVERSE COMPONENTS OF THE G-FACTOR OF CARRIERS ON THE BAND-GAP OF PB1-XSNXTE(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR APPROXIMATELY-0.23) AND PB1-XSNXSE(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR APPROXIMATELY-0.08) SOLID-SOLUTIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1318 - 1320GUREEV, DMZASAVITSKII, IIMATSONASHVILI, BNSHOTOV, AP
- [3] DETERMINATION OF THE ENERGY-BAND PARAMETERS OF PB1-XSNXSE SOLID-SOLUTIONS FROM THEIR PHOTO-LUMINESCENCE SPECTRA IN A MAGNETIC-FIELDSOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1245 - 1248GUREEV, DMZASAVITSKII, IIMATSONASHVILI, BNSHOTOV, AP
- [4] PHOTO-LUMINESCENCE OF GAAS1-XSBX(0 LESS-THAN X LESS-THAN 0.01)SOLID SOLUTIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1076 - 1078BIRYULIN, YFGANINA, NVCHALDYSHEV, VV
- [5] ENERGY SEPARATION BETWEEN NON-EQUIVALENT VALENCE BAND EXTREMA IN PB1-XSNXTE (0.59-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1)DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1981, 34 (10): : 1359 - 1362TONEVA, AT
- [6] DETECTION OF IMPURITY STATES IN THE PHOTO-LUMINESCENCE SPECTRA OF PB1-XSNXTE (XAPPROXIMATELY0.2) SOLID-SOLUTIONSJETP LETTERS, 1980, 32 (02) : 144 - 147ZASAVITSKII, IIMATSONASHVILI, BNSHOTOV, AP
- [7] MAGNETICALLY AND ELECTRICALLY ACTIVE STATES OF MANGANESE IN NARROW-GAP PB1-XSNXTE (0.18LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.23) SEMICONDUCTORSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 902 - 906LASHKAREV, GVKIKODZE, RORADCHENKO, MVSLYNKO, EIMARCHUK, IZ
- [8] DEPENDENCE OF THE BAND-GAP ON THE COMPOSITION OF PBSE1-XTEX (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SOLID-SOLUTIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (04): : 388 - 390VALEIKO, MVZASAVITSKII, IIKUZNETSOV, VLKURGANSKII, AVMATSONASHVILI, BN
- [9] DEPENDENCE OF THE BAND-GAP ON THE COMPOSITION OF PBS1-XSEX (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SOLID-SOLUTIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (12): : 1324 - 1327ZASAVITSKII, IIKURGANSKII, AVMATSONASHVILI, BNSHOTOV, AP
- [10] PHOTO-VOLTAIC DETECTORS PB1-XSNXTE (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) MINORITY-CARRIER LIFETIMES - RESISTANCE-AREA PRODUCTINFRARED PHYSICS, 1981, 21 (01): : 1 - 8GRUDZIEN, MROGALSKI, A