TEMPERATURE-DEPENDENCE OF GRUNEISEN CONSTANT OF SI AND GE

被引：21
作者：
SOMA, T [1 ]
机构：
[1] AKITA UNIV,COLL MIN,DEPT APPL PHYS & MATH,AKITA 010,JAPAN
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 82卷 / 01期
关键词：
D O I：
10.1002/pssb.2220820136
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：319 / 324
页数：6
相关论文
共 50 条
[31]   TEMPERATURE-DEPENDENCE OF DISLOCATION DRAG CONSTANT IN ANTIMONY [J].
PALVAL, PP ;
PLATKOV, VY ;
STARTSEV, VI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01) :383-391
[32]   TEMPERATURE-DEPENDENCE OF PSEUDO-GRUNEISEN PARAMETER OF LIQUID MERCURY AND LIQUEFIED GASES [J].
SHARMA, BK .
ACUSTICA, 1979, 43 (03) :221-224
[33]   FREQUENCY-DEPENDENCE OF GRUNEISEN CONSTANT [J].
GALKIN, AA ;
SVISTUNOV, VM ;
CHERNJAK, OI ;
BELOGOLOVSKII, MA .
SOLID STATE COMMUNICATIONS, 1973, 13 (08) :1095-1097
[34]   TEMPERATURE-DEPENDENCE OF THE ANDERSON-GRUNEISEN PARAMETER DELTA OF CO, RU, AND ER [J].
RAO, RR ;
RAMANAND, A .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1979, 34 (5-6) :585-588
[35]   ANDERSON - GRUNEISEN PARAMETER DELTA AND TEMPERATURE-DEPENDENCE OF BULK MODULUS OF SOME FLUORIDES [J].
RAMJIRAO, R .
PHYSICA, 1974, 77 (01) :126-130
[36]   REVERSE TEMPERATURE-DEPENDENCE OF GE SURFACE SEGREGATION DURING SI-MOLECULAR BEAM EPITAXY [J].
NAKAGAWA, K ;
MIYAO, M .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3058-3062
[37]   GE COMPOSITION AND TEMPERATURE-DEPENDENCE OF THE DEPOSITION OF SIGE LAYERS [J].
GU, SL ;
ZHENG, YD ;
ZHANG, R ;
WANG, RH ;
ZHONG, PX .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :5382-5384
[38]   TEMPERATURE-DEPENDENCE OF OXIDATION RATE IN CLEAN GE (111) [J].
FRANTSUZOV, AA ;
MAKRUSHIN, NI .
SURFACE SCIENCE, 1973, 40 (02) :320-342
[39]   TEMPERATURE-DEPENDENCE OF VICINAL SI(111) SURFACES [J].
PHANEUF, RJ ;
WILLIAMS, ED ;
BARTELT, NC .
PHYSICAL REVIEW B, 1988, 38 (03) :1984-1993
[40]   TEMPERATURE-DEPENDENCE OF THE SI, AL DISTRIBUTION IN ULTRAMARINES [J].
GORDILLO, MC ;
HERRERO, CP .
CHEMICAL PHYSICS LETTERS, 1992, 200 (04) :424-428
12345