THE DYNAMICS OF OCTAHEDRAL PRECIPITATE FORMATION IN CZOCHRALSKI SILICON - A TRANSMISSION ELECTRON-MICROSCOPY STUDY

被引：0

作者：

RIVAUD, L ^{[1
]}

LAVINE, JP ^{[1
]}

机构：

[1] EASTMAN KODAK CO, PHOTOG PROD GRP, ROCHESTER, NY 14650 USA

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：469 / 474

页数：6

共 50 条

[41] PREPARATION OF PRESELECTED AREAS OF SILICON WAFERS FOR TRANSMISSION ELECTRON-MICROSCOPY
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