GROWTH OF EFG SILICON RIBBONS

被引：74
作者：
RAVI, KV [1 ]
机构：
[1] MOBIL TYCO SOLAR ENERGY CORP,WALTHAM,MA 02154
来源：
JOURNAL OF CRYSTAL GROWTH | 1977年 / 39卷 / 01期
关键词：
D O I：
10.1016/0022-0248(77)90151-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1 / 16
页数：16
相关论文
共 34 条
[1]   SILICON CARBIDE CONTAMINATION OF EPITAXIAL SILICON GROWN BY PYROLYSIS OF TETRAMETHYL SILANE [J].
AVIGAL, YY ;
SCHIEBER, M .
JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :127-&
[2]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J].
BOOKER, GR ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1966, 14 (128) :301-&
[3]   GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .3. THEORY [J].
CHALMERS, B ;
LABELLE, HE ;
MLAVSKY, AI .
MATERIALS RESEARCH BULLETIN, 1971, 6 (08) :681-&
[4]  
CHALMERS B, 1975, NSFRANNSEGI37967XFR7
[5]  
COCKS FH, 1976, J ELECTROCHEM SOC, V121, P596
[6]  
DYRE LD, 1971, J ELECTROCHEM SOC, V118, P957
[7]   ORIENTATION DEPENDENCE OF DEFECT STRUCTURE IN EFG SILICON RIBBONS [J].
GARONE, LC ;
RAO, CVH ;
MORRISON, AD ;
SUREK, T ;
RAVI, KV .
APPLIED PHYSICS LETTERS, 1976, 29 (08) :511-513
[8]  
GARONE LC, UNPUBLISHED RESEARCH
[9]  
JEWETT DN, UNPUBLISHED RESEARCH
[10]   GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J].
LABELLE, HE ;
MLAVSKY, AI .
MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :571-&
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