GWT APPROXIMATION FOR ELECTRON SELF-ENERGIES IN SEMICONDUCTORS AND INSULATORS

被引:136
作者
DELSOLE, R
REINING, L
GODBY, RW
机构
[1] UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,I-00133 ROME,ITALY
[2] ECOLE POLYTECH,CTR NATL RECH SCI,COMM ENERGIE ATOM,SOLIDES IRRADIES LAB,F-91128 PALAISEAU,FRANCE
[3] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 12期
关键词
D O I
10.1103/PhysRevB.49.8024
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The widely used GW approximation for the self-energy operator of a system of interacting electrons may, in principle, be improved using an approximate vertex correction GAMMA. We estimate GAMMA using the local-density approximation. We report the results of a comparable series of GW calculations for the band structure of silicon, in which such a vertex correction is (i) excluded entirely, (ii) included only in the screened Coulomb interaction W, and (iii) included in both W and the expression for the self-energy. We also discuss the symmetry properties of the exact vertex correction and how they may be retained in further improvements.
引用
收藏
页码:8024 / 8028
页数:5
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