CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES

被引：60
作者：
CHEN, JTC
MULLER, RS
机构：
[1] UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
[2] UNIV CALIF, ELECTR RES LAB, BERKELEY, CA 94720 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 02期
关键词：
D O I：
10.1063/1.1663326
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：828 / 834
页数：7
相关论文
共 13 条
[1]   UBER DAS AUSHEILEN VON GITTERFEHLERN FRISCH AUFGEDAMPFTER CDS-SCHICHTEN(I) [J].
BERGER, H .
PHYSICA STATUS SOLIDI, 1961, 1 (07) :739-757
[2]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[3]   ELECTRONS AND SURFONS IN A SEMICONDUCTOR INVERSION LAYER [J].
EZAWA, H ;
KURODA, T ;
NAKAMURA, K .
SURFACE SCIENCE, 1971, 24 (02) :654-&
[4]   ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES [J].
FAHRNER, W ;
GOETZBERGER, A .
APPLIED PHYSICS LETTERS, 1970, 17 (01) :16-+
[5]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[6]   SEMICONDUCTOR SURFACE ELECTROSTATICS [J].
GREENE, RF ;
BIXLER, D ;
LEE, RN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :75-+
[7]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[8]   FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J].
LEHOVEC, K ;
SLOBODSKOY, A ;
SPRAGUE, JL .
PHYSICA STATUS SOLIDI, 1963, 3 (03) :447-464
[9]   CARRIER MOBILITY IN SILICON MOSTS [J].
MURPHY, NSJ ;
BERZ, F ;
FLINN, I .
SOLID-STATE ELECTRONICS, 1969, 12 (10) :775-+
[10]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
NICOLLIA.EH ;
GOETZBER.A .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+
12