CARRIER DENSITY DEPENDENCE OF REFRACTIVE-INDEX IN ALGAAS SEMICONDUCTOR-LASERS

被引：55

作者：

ITO, M ^{[1
]}

KIMURA, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 09期

关键词：

D O I：

10.1109/JQE.1980.1070603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：910 / 911

页数：2

共 11 条

[1]

BORN M, 1970, PRINCIPLES OPTICS

[2]

CARDONA M, 1960, INT C SEMICOND PHYS, P388

[3] DYNAMIC PROPERTIES OF SEMICONDUCTOR-LASERS [J].

ITO, M ;

ITO, T ;

KIMURA, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6168-6174

[4] OSCILLATION PROPERTIES OF ALGAAS DH LASERS WITH AN EXTERNAL GRATING [J].

ITO, M ;

KIMURA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (01) :69-77

[5]

ITO M, UNPUBLISHED

[6]

KOBAYASHI K, 1975, OQE7548 IECE OPT QUA, P47

[7] LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS [J].

LANG, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :718-726

[8] FILAMENTS AS OPTICAL WAVEGUIDES IN GALLIUM-ARSENIDE LASERS [J].

MATTHEWS, MR ;

CARLING, WP ;

DYOTT, RB .

ELECTRONICS LETTERS, 1972, 8 (23) :570-&

[9]

NOVIKOVA SI, 1961, SOV PHYS-SOL STATE, V3, P129

[10]

Thompson G. H. B., 1972, Opto-Electronics, V4, P257, DOI 10.1007/BF02334396

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