THICKNESS CONTROL OF GA1-XALXAS LAYERS GROWN BY LIQUID-PHASE EPITAXY AT LOW GROWTH TEMPERATURE

被引：1

作者：

TODOROKI, S ^{[1
]}

OHBU, I ^{[1
]}

KASHIWADA, Y ^{[1
]}

机构：

[1] HITACHI LTD,TAKASAKI WORKS,TAKASAKI 37011,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 03期

关键词：

D O I：

10.1016/0022-0248(87)90477-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：461 / 468

页数：8

共 50 条

[1] GA1-XALXAS WAVEGUIDES GROWN BY SELECTIVE LIQUID-PHASE EPITAXY
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[7] COMPOSITIONAL CONTROL OF THICK GA1-XALXAS LAYERS (X-LESS-THAN-OR-EQUAL-TO-0.72) GROWN BY LIQUID-PHASE ELECTROEPITAXY
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[8] LIQUID PHASE EPITAXIAL GROWTH OF GA1-XALXAS
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[10] LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS
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