KINEMATIC THEORY OF BALLISTIC ELECTRON-EMISSION SPECTROSCOPY OF SILICON-SILICIDE INTERFACES

被引：42

作者：

STILES, MD ^{[1
]}

HAMANN, DR ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic structure of the materials being measured has a strong effect on the spectroscopy of the interface between them measured by ballistic electron emission microscopy (BEEM). Specific calculations for CoSi2/Si(111) and NiSi2/Si(111) based on the calculation band structures of the materials illustrate some of the observable effects due to band structures, particularly of the overlayer. The BEEM spectra for CoSi2/Si(111) show a delayed onset due to a mismatch of the states near the conduction band minimum in the Si. The spectra for NiSi2/Si(111) show structure due to a decrease in the density of states in the NiSi2 at approximately 1.8 eV above the Fermi level.

引用

页码：2394 / 2398

页数：5

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