SCANNING TUNNELING MICROSCOPE STUDY ON MID-DESORPTION STAGES OF NATIVE OXIDES ON SI(111)

被引:39
作者
KOBAYASHI, Y
SUGII, K
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期
关键词
D O I
10.1116/1.585547
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Scanning tunneling microscope images lead us to the conclusion that the thermal desorption of native oxides on Si(111) does not occur layer by layer but through the formation and lateral growth of voids. This conclusion is consistent with results obtained by reflection high-energy electron diffraction, i.e., that in desorption stages, a (7 x 7) pattern appears with streaky diffraction spots due to small diffraction areas and with a background due to an amorphous oxide film on the surface. It also agrees with Auger electron spectroscopy results, that is, the temperature dependence of the oxide area before and during desorption. Nucleation centers for voids have not been identified.
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页码:748 / 751
页数:4
相关论文
共 7 条
[1]   STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J].
HELMS, CR ;
JOHNSON, NM ;
SCHWARZ, SA ;
SPICER, WE .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7007-7014
[2]   LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].
ISHIZAKA, A ;
SHIRAKI, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671
[3]   THERMAL-DESORPTION FROM SI(111) SURFACES WITH NATIVE OXIDES FORMED DURING CHEMICAL TREATMENTS [J].
KOBAYASHI, Y ;
SHINODA, Y ;
SUGII, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (06) :1004-1008
[4]   KINETICS OF HIGH-TEMPERATURE THERMAL-DECOMPOSITION OF SIO2 ON SI(100) [J].
LIEHR, M ;
LEWIS, JE ;
RUBLOFF, GW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1559-1562
[5]  
Raider S. I., 1988, PHYSICS CHEM SIO2 SI, P35
[6]   DEFECT MICROCHEMISTRY AT THE SIO2/SI INTERFACE [J].
RUBLOFF, GW ;
HOFMANN, K ;
LIEHR, M ;
YOUNG, DR .
PHYSICAL REVIEW LETTERS, 1987, 58 (22) :2379-2382
[7]   HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J].
TROMP, R ;
RUBLOFF, GW ;
BALK, P ;
LEGOUES, FK ;
VANLOENEN, EJ .
PHYSICAL REVIEW LETTERS, 1985, 55 (21) :2332-2335