MBE-GROWN INAS/GAINAS STRAINED-LAYER MQW LASERS WITH GAINAS/ALINAS MODIFIED SCH STRUCTURE

被引：0

作者：

MATSUSHIMA, Y

KATO, H

UTAKA, K

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来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 106期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：759 / 764

页数：6

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[2] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M)
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[6] ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GAINAS/ALINAS MQW LASERS IN 1.5 MU-M RANGE
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[7] STRAINED-LAYER INGAAS-GAAS-ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[9] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES
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[10] ANOMALOUS DEPENDENCE OF THRESHOLD CURRENT ON STRIPE WIDTH IN GAIN-GUIDED STRAINED-LAYER INGAAS GAAS QUANTUM WELL LASERS
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