CARRIER-CARRIER SCATTERING IN GAAS - QUANTITATIVE MEASUREMENTS FROM HOT (E,A0) LUMINESCENCE

被引:80
作者
KASH, JA
机构
关键词
D O I
10.1103/PhysRevB.40.3455
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3455 / 3458
页数:4
相关论文
共 17 条
[1]   HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J].
CONWELL, EM ;
VASSELL, MO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :22-+
[2]   TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J].
HEIBLUM, M ;
THOMAS, DC ;
KNOEDLER, CM ;
NATHAN, MI .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1105-1107
[3]   PICOSECOND LUMINESCENCE MEASUREMENTS OF HOT CARRIER RELAXATION IN III-V SEMICONDUCTORS USING SUM FREQUENCY GENERATION [J].
KASH, K ;
SHAH, J ;
BLOCK, D ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICA B & C, 1985, 134 (1-3) :189-197
[4]   FEMTOSECOND CARRIER THERMALIZATION IN DENSE FERMI SEAS [J].
KNOX, WH ;
CHEMLA, DS ;
LIVESCU, G ;
CUNNINGHAM, JE ;
HENRY, JE .
PHYSICAL REVIEW LETTERS, 1988, 61 (11) :1290-1293
[5]   ENERGIES OF S EIGENSTATES IN A STATIC SCREENED COULOMB POTENTIAL [J].
LAM, CS ;
VARSHNI, YP .
PHYSICAL REVIEW A, 1971, 4 (05) :1875-&
[6]   BALLISTIC INJECTION DEVICES IN SEMICONDUCTORS [J].
LEVI, AFJ ;
HAYES, JR ;
BHAT, R .
APPLIED PHYSICS LETTERS, 1986, 48 (23) :1609-1611
[7]  
LYON SA, 1988, SPIE C P, V942, P264
[8]   HOT-ELECTRON PHOTO-LUMINESCENCE IN GAAS CRYSTALS [J].
MIRLIN, DN ;
KARLIK, IJ ;
NIKITIN, LP ;
RESHINA, II ;
SAPEGA, VF .
SOLID STATE COMMUNICATIONS, 1981, 37 (09) :757-760
[9]   SUBPICOSECOND BASE TRANSIT-TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET) [J].
MUTO, S ;
IMAMURA, K ;
YOKOYAMA, N ;
HIYAMIZU, S ;
NISHI, H .
ELECTRONICS LETTERS, 1985, 21 (13) :555-556
[10]   A COLLECTIVE DESCRIPTION OF ELECTRON INTERACTIONS .2. COLLECTIVE VS INDIVIDUAL PARTICLE ASPECTS OF THE INTERACTIONS [J].
PINES, D ;
BOHM, D .
PHYSICAL REVIEW, 1952, 85 (02) :338-353