CONSTRICTED DOUBLE-HETEROSTRUCTURE (ALGA)AS DIODE-LASERS

被引：29

|

作者：

BOTEZ, D

ZORY, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 04期

关键词：

D O I：

10.1063/1.90013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：261 / 263

页数：3

相关论文

共 50 条

[1] MICROSCALE DEGRADATION IN (GAAL)AS DOUBLE-HETEROSTRUCTURE DIODE-LASERS
KATO, D
APPLIED PHYSICS LETTERS, 1977, 31 (09) : 588 - 590
[2] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE
WINDHORN, TH
METZE, GM
TSAUR, BY
FAN, JCC
APPLIED PHYSICS LETTERS, 1984, 45 (04) : 309 - 311
[3] FAR-FIELD SOLUTION OF THE HELMHOLTZ-EQUATION FOR DOUBLE-HETEROSTRUCTURE DIODE-LASERS
ZENG, X
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (03): : 243 - 247
[4] INASSB/ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 4 MU-M
EGLASH, SJ
CHOI, HK
APPLIED PHYSICS LETTERS, 1994, 64 (07) : 833 - 835
[5] DOUBLE-HETEROSTRUCTURE GAAS - SI DIODE LASERS
ROSSI, JA
HSIEH, JJ
APPLIED PHYSICS LETTERS, 1972, 21 (06) : 287 - &
[6] THERMAL-MODEL OF THE CATASTROPHIC DEGRADATION OF HIGH-POWER STRIPE-GEOMETRY GAAS/(ALGA)AS DOUBLE-HETEROSTRUCTURE DIODE-LASERS
NAKWASKI, W
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) : 1659 - 1668
[7] ABOVE-THRESHOLD ANALYSIS OF DOUBLE-HETEROSTRUCTURE DIODE-LASERS WITH LATERALLY TAPERED ACTIVE REGIONS
STREIFER, W
SCIFRES, DR
BURNHAM, RD
APPLIED PHYSICS LETTERS, 1980, 37 (10) : 877 - 879
[8] RELIABILITY OF CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS
BOTEZ, D
CONNOLLY, JC
ETTENBERG, M
GILBERT, DB
HUGHES, JJ
APPLIED PHYSICS LETTERS, 1983, 43 (02) : 137 - 139
[9] DEFORMATION RELATIONS OF PULSED DOUBLE-HETEROSTRUCTURE - DIODE LASERS
KELLER, R
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1975, 26 (01): : 137 - 137
[10] SIMULATION OF ANTICIPATED OPERATION CHARACTERISTICS OF DESIGNED CONSTRUCTIONS OF BROAD-CONTACT DOUBLE-HETEROSTRUCTURE (ALGA)AS DIODE-LASERS .1. THRESHOLD CURRENT
NAKWASKI, W
OPTICA APPLICATA, 1989, 19 (03) : 313 - 322

← 1 2 3 4 5 →