MQW ELECTROABSORPTION OPTICAL MODULATOR FOR 40 GBIT/S MODULATION

被引：11
|
作者：
IDO, T
TANAKA, S
SUZUKI, M
INOUE, H
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 24期
关键词：
ELECTROABSORPTION MODULATORS; INTEGRATED OPTOELECTRONICS;
D O I：
10.1049/el:19951407
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors demonstrate an MQW electroabsorption optical modulator with waveguides for 40Gbit/s modulation. The fabricated device, which is long (1.5 mm) enough for easy fabrication and packaging, shows a record modulation bandwidth of 50 GHz, low driving voltage of 2.8 V and a low insertion loss of 8dB.
引用
收藏
页码：2124 / 2125
页数：2
相关论文
共 50 条
  • [1] MQW electroabsorption optical modulator for 40 Gbit/s modulation
    Ido, T., 1600, IEE, Stevenage, United Kingdom (31):
  • [2] Optical Properties of MQW Optical Waveguides in Electroabsorption MQW Modulator
    Zhang Fuhou Song Ke Xing Jianping Hao Xiutian Dept of Electronic Eng Shandong University of technology Jinan Zeng Yiping Institute of Semiconductors Chinese Academy of Sciences Beijing
    光电子·激光, 1997, (03)
  • [3] Optical properties of MQW optical waveguides in electroabsorption MQW modulator
    Zhou, Yi
    Yu, Yang
    Chen, Yixin
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 1997, 8 (03): : 170 - 174
  • [4] 40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage
    Yoshino, K
    Wakita, K
    Kotaka, I
    Kondo, S
    Noguchi, Y
    Kuwano, S
    Takachio, N
    Otsuji, T
    Imai, Y
    Enoki, T
    22ND EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS, PROCEEDINGS, VOLS 1-6: CO-LOCATED WITH: 2ND EUROPEAN EXHIBITION ON OPTICAL COMMUNICATION - EEOC '96, 1996, : C203 - C206
  • [5] 80 Gbit/s wavelength conversion using MQW electroabsorption modulator in delayed-interferometric configuration
    Nishimura, K
    Inohara, R
    Tsurusawa, M
    Usami, M
    ELECTRONICS LETTERS, 2003, 39 (10) : 792 - 794
  • [6] 10 GBIT/S OPERATION OF POLARIZATION-INSENSITIVE, STRAINED INGAASP INGAASP MQW ELECTROABSORPTION MODULATOR
    DEVAUX, F
    CHELLES, S
    OUGAZZADEN, A
    MIRCEA, A
    HUET, F
    CARRE, M
    ELECTRONICS LETTERS, 1993, 29 (13) : 1201 - 1203
  • [7] Characterisation of a MQW electroabsorption modulator as an all-optical demultiplexer
    Oxenlowe, LK
    Romstad, F
    Tersigni, A
    Hojfeldt, S
    Yvind, K
    Skovgaard, PMW
    Hoppe, K
    Hanberg, J
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 36 - 37
  • [8] 500 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator
    NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
    1600, 555-557 (April 29, 2004):
  • [9] 500 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator
    Kodama, S
    Yoshimatsu, T
    Ito, H
    ELECTRONICS LETTERS, 2004, 40 (09) : 555 - 557
  • [10] Chirp Control of an Electroabsorption Modulator to be used for Regeneration and Wavelength Conversion at 40 Gbit/s in All-Optical Networking
    M. Y. Jamro
    J. M. Senior
    Photonic Network Communications, 2005, 10 : 267 - 278
12345