INFRARED ABSORPTION OF SEMICONDUCTOR AT LOW TEMPERATURES

被引：23

作者：

HAGA, E

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1964年 / 19卷 / 11期

关键词：

D O I：

10.1143/JPSJ.19.2030

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2030 / &

共 14 条

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[2]

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[3] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J].

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[4] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 2. INAS [J].

HAGA, E ;

KIMURA, H .

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[5] FREE-CARRIER INFRARED ABSORPTION AND DETERMINATION OF DEFORMATION-POTENTIAL CONSTANT IN N-TYPE INSB [J].

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[6] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS .4. INTER-CONDUCTION BAND TRANSITIONS [J].

HAGA, E ;

KIMURA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) :1596-&

[7] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

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[8]

MARTON L, 1955, ADV ELECTRON, V7, P85

[9] INFRA-RED FARADAY EFFECT IN N-TYPE ALSB + GAP + IN UNDOPED GAP [J].

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[10]

NASLEDOV DN, 1963, SOV PHYS-SOL STATE, V4, P2021

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