THEORY OF ISOTHERMAL CURRENTS AND DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATORS CONTAINING ARBITRARY TRAP DISTRIBUTIONS

被引：404

作者：

SIMMONS, JG ^{[1
]}

TAM, MC ^{[1
]}

机构：

[1] UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.7.3706

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3706 / 3713

页数：8

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