SURFACE-STATE DENSITY AT (HYDROGEN-CHLORIDE) OXIDE-SILICON INTERFACE

被引：31

作者：

SEVERI, M

SONCINI, G

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 16期

关键词：

D O I：

10.1049/el:19720293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：402 / &

共 11 条

[1]

Baccarani G., 1971, Alta Frequenza, V40, P674

[2] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

CASTRO, PL ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+

[3] CHARACTERIZATION OF SURFACE STATES AT SI-SIO2 INTERFACE USING QUASI-STATIC TECHNIQUE [J].

FOGELS, EA ;

SALAMA, CAT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) :2002-+

[4] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].

GOETZBERGER, A ;

HEINE, V ;

NICOLLIAN, EH .

APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+

[5] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[6]

KHUN M, 1971, J ELECTROCHEM SOC, V118, P370

[7]

KOOI E, 1966, PHILIPS RES REP, V21, P477

[8] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J].

KRIEGLER, RJ ;

CHENG, YC ;

COLTON, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :388-&

[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[10] USE OF HCI GETTERING IN SILICON DEVICE PROCESSING [J].

ROBINSON, PH ;

HEIMAN, FP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :141-+

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