DEPTH PROFILE INVESTIGATIONS OF METALLIC LAYER CONTACTS TO GAAS(100) AND INP(100) BY MEANS OF AUGER-ELECTRON SPECTROSCOPY AND SPUTTER TECHNIQUE

被引：0
作者：
STEIN, S
REIF, A
STREUBEL, P
TSCHULIK, A
STORI, H
机构：
[1] UNIV LEIPZIG,TALSTR 35,O-7010 LEIPZIG,GERMANY
[2] VIENNA TECH UNIV,INST ALLGEMEINE PHYS,A-1040 VIENNA,AUSTRIA
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1991年 / 341卷 / 1-2期
关键词：
D O I：
10.1007/BF00322109
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The present technological development in the field of opto-electronics requires a sufficiently high stability of the applied metal-semiconductor contacts because of the thermal and electrical cross-section loading. Au/Pt/Ti layer contacts to GaAs(100) and InP(100) substrates annealed under various conditions were investigated by means of Auger Electron Spectroscopy (AES) in conjunction with ion sputtering. The diffusion and reaction behavior are discussed based on intensity-depth profiles and chemical shifts. As the main result we found that the GaAs contact is more stable. It reacts strongly at a temperature of about 450-degrees-C. On the other hand Au/Pt/Ti/InP contact reacts already above 300-degrees-C. The principal reason for the difference in the behavior of InP and GaAs contacts is the In segregation.
引用
收藏
页码：66 / 69
页数：4
相关论文
共 8 条
  • [1] [Anonymous], 1982, J PHYS CHEM REF D S2, V11
  • [2] SEMICONDUCTOR SURFACE STRUCTURES
    Kahn, A.
    [J]. SURFACE SCIENCE REPORTS, 1983, 3 (4-5) : 193 - 300
  • [3] PT/TI LOW RESISTANCE NON-ALLOYED OHMIC CONTACTS TO INP-BASED PHOTONIC DEVICES
    KATZ, A
    CHU, SNG
    THOMAS, PM
    DAUTREMONTSMITH, WC
    [J]. RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 405 - 412
  • [4] SYSTEMATICS OF INTERFACIAL CHEMICAL-REACTIONS ON INP(110)
    KENDELEWICZ, T
    PETRO, WG
    LINDAU, I
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 453 - 458
  • [5] CHARACTERIZATION OF THE DIFFUSION AND REACTION BEHAVIOR OF TI/PT/AU LAYER CONTACTS ON GAAS BY MEANS OF AUGER-ELECTRON SPECTROSCOPY AND ION SPUTTERING TECHNIQUE
    REIF, A
    STREUBEL, P
    MEISEL, A
    ZEISSIG, D
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 122 (01): : 331 - 340
  • [6] INTERDIFFUSION AND CHEMICAL TRAPPING AT INP(110) INTERFACES WITH AU, AL, NI, CU, AND TI
    SHAPIRA, Y
    BRILLSON, LJ
    KATNANI, AD
    MARGARITONDO, G
    [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4586 - 4594
  • [7] STREUBEL P, 1988, MATH NATURWISS R, V37, P614
  • [8] 1971, LANDOLT BORNSTEIN, P175
1