REACTIVE ION ETCHING OF POLYCRYSTALLINE SILICON USING SICL4

被引：10
作者：
TANG, YS
WILKINSON, CDW
机构：
[1] Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期
关键词：
D O I：
10.1063/1.104715
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reactive ion etching of polycrystalline silicon using SiCl4 was used to etch 70-nm-wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl2+.
引用
收藏
页码：2898 / 2900
页数：3
相关论文
共 50 条
[41]   REACTIVE ION ETCHING OF GAAS THROUGH WAFER VIA HOLES USING CL-2 AND SICL4 GASES - A COMPREHENSIVE STATISTICAL APPROACH [J].
CAMACHO, A ;
MORGAN, DV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (05) :2933-2940
[42]   SILICON AND CHLORINE LASER OSCILLATIONS IN SICL4 [J].
CARR, WC ;
GROW, RW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (05) :726-&
[43]   FORMATION OF SICL2 IN REACTIONS OF SICL4 AND HCL WITH SILICON [J].
VOORHOEVE, JH .
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1978, 176 (SEP) :137-137
[44]   REACTIVE ION ETCHING OF GALLIUM-ARSENIDE IN CCL2F2 AND SICL4 PLASMAS - INFLUENCE OF CHAMBER MATERIAL AND ETCHING MASK [J].
ETRILLARD, JJP .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7A) :4126-4132
[45]   REACTIVE ION ETCHING OF COPPER IN SICL4-BASED PLASMAS [J].
HOWARD, BJ ;
STEINBRUCHEL, C .
APPLIED PHYSICS LETTERS, 1991, 59 (08) :914-916
[46]   REACTIVE ION ETCH PROCESSES FOR AMORPHOUS-SILICON THIN-FILM TRANSISTORS - A SICL4 BASED CHEMISTRY [J].
KUO, Y ;
SCHROTT, AG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (02) :502-506
[47]   ETCHING OF AN AL SOLID BY SICL4 MOLECULES AT 600 EV [J].
PARK, SC ;
CHO, CH ;
RHEE, CH .
BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 1990, 11 (01) :1-7
[48]   Reactive ion etching of copper films in a SiCl4, N-2, Cl-2, and NH3 mixture [J].
Ohno, K ;
Sato, M ;
Arita, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (12) :4089-4095
[49]   Reactive ion etching of copper films in a SiCl4, N2, Cl2, and NH3 mixture [J].
NTT Affiliated Business Dep, Headquarters, Tokyo, Japan .
J Electrochem Soc, 12 (4089-4095)
[50]   Inductively coupled plasma reactive ion etching with SiCl4 gas for recessed gate AlGaN/GaN heterostructure field effect transistor [J].
Matsuura, Kazuaki ;
Kikuta, Daigo ;
Ao, Jin-Ping ;
Ogiya, Hiromichi ;
Hiramot, Michihiro ;
Kawa, Hiroji ;
Ohno, Yasuo .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B) :2320-2324
12345