REACTIVE ION ETCHING OF POLYCRYSTALLINE SILICON USING SICL4

被引：10

作者：

TANG, YS

WILKINSON, CDW

机构：

[1] Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期

关键词：

D O I：

10.1063/1.104715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive ion etching of polycrystalline silicon using SiCl4 was used to etch 70-nm-wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl2+.

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收藏

页码：2898 / 2900

页数：3

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