EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD

A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon layers on silicon substrates in the temperature range 590-degrees-C - 1000-degrees-C. Low pressure deposition schedules have been found essential in order to minimise the concentrations of oxygen and carbon in the layers. In-situ pre-cleaning schedules have been established to remove oxide layers from the substrates prior to layer deposition. The application of these deposited epitaxial layers to the production of a buried gate static induction thyristor is described.