REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING

被引：139

作者：

VANVECHTEN, JA ^{[1
]}

TSU, R ^{[1
]}

SARIS, FW ^{[1
]}

HOONHOUT, D ^{[1
]}

机构：

[1] FOM,INST ATOOM & MOLECUULFYS,AMSTERDAM,NETHERLANDS

来源：

PHYSICS LETTERS A | 1979年 / 74卷 / 06期

关键词：

D O I：

10.1016/0375-9601(79)90241-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Many recent publications dealing with Si pulsed laser annealing have assumed that the transformation is strictly thermal melting-recrystallization. We recount observations indicating the material was not subjected to thermal melting. © 1979.

引用

页码：417 / 421

页数：5

共 34 条

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[7]

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[9]

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PHYSICS LETTERS A, 1979, 74 (3-4) :253-255

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