METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTE FILMS ON GAAS SUBSTRATES

被引：3
作者：
POLLARD, KT [1 ]
ERBIL, A [1 ]
SUDHARSANAN, R [1 ]
PERKOWITZ, S [1 ]
机构：
[1] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 12期
关键词：
D O I：
10.1063/1.350421
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
PbTe films on GaAs substrates were grown by metalorganic chemical vapor deposition for the first time, at substrate temperatures as low as 300-degrees-C. Films grown directly on GaAs below a substrate temperature of 400-degrees-C showed (111) orientation on (100) GaAs and (100) orientation on (111) GaAs. However, above 400-degrees-C on GaAs and on CdTe buffer layers, the films followed the orientation of GaAs and CdTe, respectively. Hall measurements showed n-type conductivity in PbTe films grown directly on GaAs regardless of the Te/Pb input gas ratio and substrate temperature. The conductivity type of PbTe films grown on CdTe buffer layers depended on the input gas ratio of Te/Pb. The resistivity measured by Hall measurement was higher than that determined from infrared data, suggesting microcracks in the films.
引用
收藏
页码：6136 / 6139
页数：4
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