METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTE FILMS ON GAAS SUBSTRATES

被引：3

作者：

POLLARD, KT ^{[1
]}

ERBIL, A ^{[1
]}

SUDHARSANAN, R ^{[1
]}

PERKOWITZ, S ^{[1
]}

机构：

[1] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.350421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PbTe films on GaAs substrates were grown by metalorganic chemical vapor deposition for the first time, at substrate temperatures as low as 300-degrees-C. Films grown directly on GaAs below a substrate temperature of 400-degrees-C showed (111) orientation on (100) GaAs and (100) orientation on (111) GaAs. However, above 400-degrees-C on GaAs and on CdTe buffer layers, the films followed the orientation of GaAs and CdTe, respectively. Hall measurements showed n-type conductivity in PbTe films grown directly on GaAs regardless of the Te/Pb input gas ratio and substrate temperature. The conductivity type of PbTe films grown on CdTe buffer layers depended on the input gas ratio of Te/Pb. The resistivity measured by Hall measurement was higher than that determined from infrared data, suggesting microcracks in the films.

引用

页码：6136 / 6139

页数：4

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