INTERFACE-STATE GENERATION IN RADIATION-HARD OXIDES

被引：82

作者：

WINOKUR, PS

BOESCH, HE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/TNS.1980.4331083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1647 / 1650

页数：4

共 10 条

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[9] 2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES [J].

WINOKUR, PS ;

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MCLEAN, FB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3492-3494

[10] FIELD-DEPENDENT AND TIME-DEPENDENT RADIATION EFFECTS AT SIO2-SI INTERFACE OF HARDENED MOS CAPACITORS [J].

WINOKUR, PS ;

BOESCH, HE ;

MCGARRITY, JM ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2113-2118

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