VARIABLE-GAP AND BARRIER PHOTO-EMFS DEVELOPED IN A VARIABLE-GAP P-N STRUCTURE

被引：0

作者：

BERKELIEV, A

VOLKOV, AS

IMENKOV, AN

LIPKO, AL

NAZAROV, N

SULEIMENOV, BS

TSARENKOV, BV

YAKOVLEV, YP

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 05期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：549 / 552

页数：4

相关论文

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EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :1950-&

[3]

IMENKOV AN, 1978, SOV PHYS SEMICOND+, V12, P1413

[4] GENERATION OF AN EMF IN SEMICONDUCTORS WITH NONEQUILIBRIUM CURRENT CARRIER CONCENTRATIONS [J].

TAUC, J .

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