CRYOGENIC 2-4 GHZ FET AMPLIFIER

被引：3
|
作者：
VOWINKEL, B
机构：
来源：
ELECTRONICS LETTERS | 1980年 / 16卷 / 19期
关键词：
D O I：
10.1049/el:19800519
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：730 / 731
页数：2
相关论文
共 50 条
  • [1] A 2-4 GHz Silicon Germanium Cryogenic Low Noise Amplifier MMIC
    Montazeri, Shirin
    Bardin, Joseph C.
    2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 1487 - 1490
  • [2] A 19 GHZ FET AMPLIFIER
    AJOSE, SO
    HUNG, HLA
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (03) : 331 - 337
  • [3] CRYOGENIC GAAS-FET AMPLIFIER
    WITHINGTON, S
    ELECTRONICS LETTERS, 1984, 20 (12) : 506 - 508
  • [4] A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency
    Guo, Hao
    Chen, Chun-Qing
    Wang, Hao-Quan
    Hao, Ming-Li
    PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS, 2016, 63 (63): : 7 - 14
  • [5] 2-4 GHz wideband power amplifier with ultra-flat gain and high PAE
    Ding, X.
    He, S.
    You, F.
    Xie, S.
    Hu, Z.
    ELECTRONICS LETTERS, 2013, 49 (05) : 326 - +
  • [6] A 60 GHZ GAAS-FET AMPLIFIER
    WATKINS, ET
    SCHELLENBERG, JM
    HACKETT, LH
    YAMASAKI, H
    FENG, M
    MICROWAVE JOURNAL, 1983, 26 (05) : 54 - 54
  • [7] 18-40 GHZ FET AMPLIFIER
    ROSENBERG, JC
    MICROWAVE JOURNAL, 1984, 27 (08) : 68 - 68
  • [8] FIVE WATT 4-8 GHz GaAs FET AMPLIFIER.
    Ohta, Kiyofumi
    Jodai, Shizuka
    Fukuden, Nobutoshi
    Hirano, Yutaka
    Itoh, Masanobu
    1600, (22):
  • [9] A 4 GHz Cryogenic Amplifier in 0.18 μm General Purpose BiCMOS Technology
    Shiao, Yu-Shao Jerry
    Huang, Guo-Wei
    Chiueh, Tzi-Hong
    2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2014, : 1181 - 1183
  • [10] A 60-GHZ GAAS-FET AMPLIFIER
    WATKINS, ET
    MICROWAVES & RF, 1983, 22 (05) : 71 - 71
12345