ANNEALING OF RADIATION-INDUCED POSITIVE CHARGE IN MOS DEVICES WITH ALUMINUM AND POLYSILICON GATE CONTACTS

被引：19
作者：
AITKEN, JM
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 03期
关键词：
D O I：
10.1007/BF02652941
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：639 / 650
页数：12
相关论文
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