ANOMALOUS HALL-MOBILITY IN GALLIUM-ARSENIDE

被引:0
作者
KRIVOV, MA [1 ]
MALYANOV, SV [1 ]
MELEV, VG [1 ]
机构
[1] VD KUZNETSOV PHYS TECH INST,TOMSK,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 02期
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D O I
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:279 / 280
页数:2
相关论文
共 27 条
[1]  
ALEKSAND.GA, 1973, SOV PHYS SEMICOND+, V7, P193
[2]  
ALEKSAND.GA, 1972, SOV PHYS SEMICOND+, V6, P266
[3]  
ALEKSANDROVA GA, 1972, FTP, V6, P311
[4]  
ALEKSANDROVA GA, 1973, FIZ TEKH POLUPROV, V7, P270
[5]  
BEKMURATOV MF, 1973, SOV PHYS SEMICOND+, V7, P55
[6]  
BEKMURATOV MF, 1973, FIZ TEKH POLUPROV, V7, P83
[7]   INTERPRETATION OF EQUILIBRIUM AND STEADY-STATE HALL AND THERMOELECTRIC EFFECTS IN INHOMOGENEOUS MATERIALS [J].
BLOUNT, GH ;
BUBE, RH ;
ROBINSON, AL .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2190-&
[8]  
BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062
[9]  
Dakhovskii I. V., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2165
[10]  
DAKHOVSKII IV, 1971, SOV PHYS SEMICOND+, V4, P1857