PHOTO-LUMINESCENCE OF GAAS-LAYERS DOPED BY IMPLANTATION OF ZN+ IONS

[1] DEPTH DISTRIBUTION OF DEFECTS IN MG-ION AND CD-ION IMPLANTED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (02) : 405 - 406

[2] AZIKOV BS, 1979, IZV VUZ FIZ+, P22

[3] Boltaks B.I., 1972, DIFFUSION POINT DEFE

[4] PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS [J]. JOURNAL OF LUMINESCENCE, 1975, 10 (05) : 313 - 322

[5] JEONG MU, 1971, 1970 P INT C RAD EFF, P287

[6] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 89 - 90

[7] OKUNEV VD, 1972, ELEKTRON TEKH MATER, P79

[8] Pankove J. I, 1975, OPTICAL PROCESSES SE

[9] STRESS SPLITTING OF 0.84-EV LUMINESCENCE IN GAAS-CR [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) : 4438 - 4441

[10] PHOTOLUMINESCENCE OF ION-IMPLANTATION-DAMAGED TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4653 - 4656

[1] DEPTH DISTRIBUTION OF DEFECTS IN MG-ION AND CD-ION IMPLANTED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (02) : 405 - 406

[2] AZIKOV BS, 1979, IZV VUZ FIZ+, P22

[3] Boltaks B.I., 1972, DIFFUSION POINT DEFE

[4] PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS [J]. JOURNAL OF LUMINESCENCE, 1975, 10 (05) : 313 - 322

[5] JEONG MU, 1971, 1970 P INT C RAD EFF, P287

[6] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 89 - 90

[7] OKUNEV VD, 1972, ELEKTRON TEKH MATER, P79

[8] Pankove J. I, 1975, OPTICAL PROCESSES SE

[9] STRESS SPLITTING OF 0.84-EV LUMINESCENCE IN GAAS-CR [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) : 4438 - 4441

[10] PHOTOLUMINESCENCE OF ION-IMPLANTATION-DAMAGED TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4653 - 4656