ELECTRONIC-STRUCTURE OF [113]-GROWN (GAAS)M(ALAS)N SUPERLATTICES

被引：10

作者：

IKONIC, Z

SRIVASTAVA, GP

INKSON, JC

机构：

[1] Department of Physics, Exeter University, Exeter EX4 4QL, Stocker Road

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.49.10749

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of (GaAs)m(AlAs), superlattices, with 1 less-than-or-equal-to (m,n) less-than-or-equal-to 10, grown in the [113] direction is calculated by employing the local empirical pseudopotential approach within the S-matrix implementation. Short period (n,n) superlattices are predicted to have a marginally direct (indirect) band gap for even (odd) values of n. The calculated results are compared against those for the more conventional growth directions.

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页码：10749 / 10752

页数：4

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