DISTRIBUTION OF DAMAGE CLUSTERS IN ION-IMPLANTED SILICON

被引：2
|
作者：
BENNETT, DJ
PRICE, TE
机构：
[1] Dept. of Electr. and Electron. Eng., Paisley Univ.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期
关键词：
D O I：
10.1088/0268-1242/8/8/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a model for the description of damage accumulation during ion implantation which includes cluster formation and the subsequent transition to the amorphous phase. The model is compared with a two-dimensional Monte Carlo calculation of point defects created during low-energy boron implantation. This comparison confirms that the model is useful for describing implantation damage in cases where the accumulation of damage occurs by the overlap of individual damage cascades.
引用
收藏
页码：1496 / 1500
页数：5
相关论文
共 50 条
  • [11] Analysis of platelet distribution in H ion-implanted silicon
    Iwata, H
    Takagi, M
    Tokuda, Y
    Imura, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) : 94 - 97
  • [12] DAMAGE ANNEALING BEHAVIOR IN DIATOMIC PHOSPHORUS ION-IMPLANTED SILICON
    YANG, GQ
    KHANH, NQ
    FRIED, M
    KOTAI, E
    SCHILLER, V
    LU, LC
    GYULAI, J
    ZOU, SH
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 115 (1-3): : 183 - 192
  • [13] AVOIDING PREAMORPHIZATION DAMAGE IN MEV HEAVY ION-IMPLANTED SILICON
    SCHREUTELKAMP, RJ
    CUSTER, JS
    LIEFTING, JR
    SARIS, FW
    APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2827 - 2829
  • [14] DAMAGE ENHANCEMENT IN BF2+ ION-IMPLANTED SILICON
    LIN, CL
    LI, JH
    HEMMENT, PLF
    LI, XG
    YANG, GG
    ZHOU, ZY
    ZOU, SC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (05) : 632 - 634
  • [15] INVESTIGATIONS OF RADIATION-DAMAGE PRODUCTION IN ION-IMPLANTED SILICON
    GLASER, E
    GOTZ, G
    SOBOLEV, N
    WESCH, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (02): : 603 - 614
  • [16] LATTICE DAMAGE IN ION-IMPLANTED SILICON-GERMANIUM ALLOYS
    HAYNES, TE
    HOLLAND, OW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 901 - 905
  • [17] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [18] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [19] STRUCTURE OF ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (12): : 1392 - &
  • [20] ION-IMPLANTED SILICON TRANSISTORS
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1974, 17 (08) : 27 - 27
12345