DISTRIBUTION OF DAMAGE CLUSTERS IN ION-IMPLANTED SILICON

被引：2
|
作者：
BENNETT, DJ
PRICE, TE
机构：
[1] Dept. of Electr. and Electron. Eng., Paisley Univ.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期
关键词：
D O I：
10.1088/0268-1242/8/8/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a model for the description of damage accumulation during ion implantation which includes cluster formation and the subsequent transition to the amorphous phase. The model is compared with a two-dimensional Monte Carlo calculation of point defects created during low-energy boron implantation. This comparison confirms that the model is useful for describing implantation damage in cases where the accumulation of damage occurs by the overlap of individual damage cascades.
引用
收藏
页码：1496 / 1500
页数：5
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