ETCHING CHARACTERISTICS OF SIO2 IN CHF3 GAS PLASMA

被引：11
|
作者：
TOYODA, H
KOMIYA, H
ITAKURA, H
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 03期
关键词：
D O I：
10.1007/BF02652937
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：569 / 584
页数：16
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