RADIATION-DAMAGE IN SILICON MICROSTRIP DETECTORS

被引：50
|
作者：
OHSUGI, T
TAKETANI, A
NODA, M
CHIBA, Y
ASAI, M
KONDO, T
SATO, T
TAKASAKI, M
TANAKA, KH
KONDO, K
HIRAYAMA, H
YAMAMOTO, K
TANAKA, H
机构：
[1] KEK,NATL LAB HIGH ENERGY PHYS,TSUKUBA,IBARAKI,JAPAN
[2] HAMAMATSU PHOTON KK,HAMAMATSU,JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1988年 / 265卷 / 1-2期
关键词：
D O I：
10.1016/0168-9002(88)91061-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：105 / 111
页数：7
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