IMPROVED TEM SAMPLES OF SEMICONDUCTORS PREPARED BY A SMALL-ANGLE CLEAVAGE TECHNIQUE

被引：70

作者：

MCCAFFREY, JP

机构：

[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario

来源：

MICROSCOPY RESEARCH AND TECHNIQUE | 1993年 / 24卷 / 02期

关键词：

SPECIMEN PREPARATION; CLEAVING; CRYSTAL STRUCTURE;

D O I：

10.1002/jemt.1070240210

中图分类号：

R602 [外科病理学、解剖学]; R32 [人体形态学];

学科分类号：

100101 ;

摘要：

A small-angle cleavage technique has been developed that produces superior transmission electron microscope (TEM) samples of semiconductors and related materials. The technique involves back-thinning the sample to approximately 100 mum, then scribing a groove on this back face at a specified small angle to a standard cleavage plane. The sample is cleaved along this scribe line followed by cleaving along the standard cleavage plane to produce a thin wedged sample. Samples prepared by this method are characterized and compared with conventional and low-angle ion milled samples. The technique is illustrated, and the characteristic geometry of the cleaved sample is explained in terms of a simplified cleavage model.

引用

页码：180 / 184

页数：5