IMPROVED TEM SAMPLES OF SEMICONDUCTORS PREPARED BY A SMALL-ANGLE CLEAVAGE TECHNIQUE

被引：70
作者：
MCCAFFREY, JP
机构：
[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario
来源：
MICROSCOPY RESEARCH AND TECHNIQUE | 1993年 / 24卷 / 02期
关键词：
SPECIMEN PREPARATION; CLEAVING; CRYSTAL STRUCTURE;
D O I：
10.1002/jemt.1070240210
中图分类号：
R602 [外科病理学、解剖学]; R32 [人体形态学];
学科分类号：
100101 ;
摘要：
A small-angle cleavage technique has been developed that produces superior transmission electron microscope (TEM) samples of semiconductors and related materials. The technique involves back-thinning the sample to approximately 100 mum, then scribing a groove on this back face at a specified small angle to a standard cleavage plane. The sample is cleaved along this scribe line followed by cleaving along the standard cleavage plane to produce a thin wedged sample. Samples prepared by this method are characterized and compared with conventional and low-angle ion milled samples. The technique is illustrated, and the characteristic geometry of the cleaved sample is explained in terms of a simplified cleavage model.
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收藏
页码：180 / 184
页数：5
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