STRESS GENERATION IN THIN CU-TI FILMS IN VACUUM AND HYDROGEN

被引：13

作者：

APBLETT, C ^{[1
]}

FICALORA, PJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.348370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin bilayer films of copper metal on titanium were sputter deposited on oxidized silicon wafers and annealed in vacuum and hydrogen ambients. Annealing in vacuum caused the bilayers to fail in tension, while the hydrogen annealed films did not fail. This observation is explained as stress generated due to crystal lattice volume changes and thermal expansion coefficients.

引用

页码：4431 / 4432

页数：2

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