COSI2 AND SI EPITAXIAL-GROWTH IN (111) SI SUB-MICRON LINES WITH APPLICATION TO A PERMEABLE BASE TRANSISTOR

[11] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, P450

[12] Rathman D. D., 1982, International Electron Devices Meeting. Technical Digest, P650

[13] SI/COSI2/SI PERMEABLE BASE TRANSISTOR OBTAINED BY SILICON MOLECULAR-BEAM EPITAXY OVER A COSI2 GRATING [J]. ELECTRONICS LETTERS, 1986, 22 (13) : 699 - 700

[14] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 203 - 205

[11] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, P450

[12] Rathman D. D., 1982, International Electron Devices Meeting. Technical Digest, P650

[13] SI/COSI2/SI PERMEABLE BASE TRANSISTOR OBTAINED BY SILICON MOLECULAR-BEAM EPITAXY OVER A COSI2 GRATING [J]. ELECTRONICS LETTERS, 1986, 22 (13) : 699 - 700

[14] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 203 - 205